PN Junction Diode Unit
Product Code : SCL-EAE-11267
Quick answer: The PN Junction Diode Unit is used to plot the V-I characteristics of a semiconductor diode. In forward bias the current rises rapidly once the knee voltage is passed; in reverse bias only a small leakage current flows. Students record readings with a regulated supply and meters and compare forward and reverse resistance. Lab Exports manufactures it in Delhi for schools, colleges and universities.
Specifications
| Parameter | Detail |
|---|---|
| Semiconductor device | PN junction diode |
| Primary experiment | Forward- and reverse-bias V-I characteristics |
| Terminals | Anode and cathode identified by panel markings or circuit diagram |
| Connections | Points for a power supply and measuring instruments |
Diode type, meter ranges and panel details are not listed on this page; email [email protected] with the house code for the current configuration.
How the diode characteristics experiment is done
A PN junction forms where P-type and N-type semiconductor meet, and a depletion region with a barrier potential develops at the junction. In forward bias (P side to positive) the barrier is lowered and the current rises steeply once the applied voltage passes the knee or cut-in voltage, about 0.7 V for silicon and 0.3 V for germanium. In reverse bias the barrier widens and only a very small reverse current flows until breakdown.
- Place the unit on a dry, non-conductive bench and identify the anode and cathode.
- Connect for forward bias with a milliammeter in series and a voltmeter across the diode.
- Raise the supply from zero in small steps and record voltage and current.
- Reverse the connections, change to a microammeter, and record the reverse readings.
- Plot both characteristics and read the knee voltage from the forward curve.
The ratio of voltage to current at points on each curve shows that the diode has a low forward resistance and a very high reverse resistance, the one-way conduction used in rectifiers.
Key features
- PN junction diode for forward and reverse bias study
- Supports V-I curve plotting from recorded readings
- Introduces P-region, N-region, depletion region and barrier potential
- Clear anode and cathode identification for correct polarity
- Knee (cut-in) voltage found from measured data
- Connection points for a regulated supply and meters
Documentation and supply
Most Lab Exports products carry a one-year manufacturer warranty.
Lab Exports manufactures the PN junction diode unit at its works in Laxmi Nagar, Delhi, and supplies it to schools, colleges and universities in India and 60+ countries, handling the export documents for each shipment. More about the company is on the About Lab Exports page.
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- Daniel Cell (SCL-EAE-11263)
- Resistance Coil Unit (SCL-EAE-11262)
The full range is in the Electrical and Electronics section of the Physics Lab range.
Frequently asked questions
What is the knee voltage of a PN junction diode?
It is the forward voltage beyond which the current rises rapidly, about 0.7 V for a silicon diode and about 0.3 V for germanium.
Why is a microammeter used for the reverse characteristic?
In reverse bias only a very small leakage current flows, so a more sensitive meter is needed to read it.
What is the price of the PN junction diode unit?
Prices are not published on the website. Add the PN junction diode unit to the Enquiry Cart with the Add To Cart button on this page, or email [email protected] with the house code SCL-EAE-11267 and the quantity, to receive a quotation.
Does Lab Exports manufacture the PN junction diode unit?
Yes. Lab Exports manufactures the PN junction diode unit at its works at 11/315, Lalita Park, Laxmi Nagar, Delhi 110092, under house code SCL-EAE-11267.
Request a quote
Email [email protected] with the house code SCL-EAE-11267 and the quantity, or add the PN junction diode unit to the Enquiry Cart with the Add To Cart button on this page. Tender buyers can also see the Tenders and OEM page.
